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abbasnezhad, farhad, Seifi, Zahra. (1404). High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization. پژوهشنامه مدیریت اجرایی, (), -. doi: 10.22080/cste.2025.29172.1044
farhad abbasnezhad; Zahra Seifi. "High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization". پژوهشنامه مدیریت اجرایی, , , 1404, -. doi: 10.22080/cste.2025.29172.1044
abbasnezhad, farhad, Seifi, Zahra. (1404). 'High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization', پژوهشنامه مدیریت اجرایی, (), pp. -. doi: 10.22080/cste.2025.29172.1044
abbasnezhad, farhad, Seifi, Zahra. High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization. پژوهشنامه مدیریت اجرایی, 1404; (): -. doi: 10.22080/cste.2025.29172.1044

High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization

Contributions of Science and Technology for Engineering
مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 03 مرداد 1404
نوع مقاله: Original Article
شناسه دیجیتال (DOI): 10.22080/cste.2025.29172.1044
نویسندگان
farhad abbasnezhad* 1؛ Zahra Seifi2
1Department of Electrical Engineering and Information Technology, Iranian Research Organization for Science and Technology (IROST)
2Amirkabir University of Technology, Department of Electrical Engineering.
تاریخ دریافت: 15 اردیبهشت 1404،  تاریخ بازنگری: 20 خرداد 1404،  تاریخ پذیرش: 03 مرداد 1404 
چکیده
This paper presents the design and evaluation of a high-efficiency harmonic tuned L-band power amplifier (PA) utilizing a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). To meet the demands of modern wireless communication and radar systems operating in the L-band, advanced harmonic tuning techniques were employed, specifically focusing on controlling the impedance terminations at the second (2f₀) and third (3f₀) harmonic frequencies. Through careful load-pull analysis and optimized output matching network design, precise harmonic terminations were achieved alongside optimal fundamental frequency impedance matching. The fabricated PA demonstrates state-of-the-art performance, delivering a saturated output power (Psat) of 46.4 dBm with a corresponding peak Power Added Efficiency (PAE) of 83%. Critically, the PA maintains high efficiency under back-off conditions, achieving 60% PAE at 3 dB output back-off (OBO). These results highlight the effectiveness of this combined second and third harmonic optimization approach with GaN HEMT technology, which enables both high peak efficiency and excellent back-off efficiency for demanding L-band applications.
کلیدواژه‌ها
Power Amplifier (PA)؛ Gallium Nitride (GaN)؛ L-Band؛ Harmonic Tuning؛ High Efficiency؛ Power Added Efficiency (PAE)؛ Second and Third Harmonics
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