دانشگاه مازندران

 آمار

تعداد نشریات31
تعداد شماره‌ها508
تعداد مقالات4,926
تعداد مشاهده مقاله7,581,763
تعداد دریافت فایل اصل مقاله5,642,276
abbasnezhad, farhad, Seifi, Zahra. (1404). High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization. پژوهشنامه مدیریت اجرایی, 2(4), 28-32. doi: 10.22080/cste.2025.29172.1044
farhad abbasnezhad; Zahra Seifi. "High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization". پژوهشنامه مدیریت اجرایی, 2, 4, 1404, 28-32. doi: 10.22080/cste.2025.29172.1044
abbasnezhad, farhad, Seifi, Zahra. (1404). 'High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization', پژوهشنامه مدیریت اجرایی, 2(4), pp. 28-32. doi: 10.22080/cste.2025.29172.1044
abbasnezhad, farhad, Seifi, Zahra. High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization. پژوهشنامه مدیریت اجرایی, 1404; 2(4): 28-32. doi: 10.22080/cste.2025.29172.1044

High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization

Contributions of Science and Technology for Engineering
مقاله 3، دوره 2، شماره 4، آذر 2025، صفحه 28-32    اصل مقاله (607.3 K)
نوع مقاله: Original Article
شناسه دیجیتال (DOI): 10.22080/cste.2025.29172.1044
نویسندگان
farhad abbasnezhad* 1؛ Zahra Seifi2
1Department of Electrical Engineering and Information Technology, Iranian Research Organization for Science and Technology (IROST)
2Amirkabir University of Technology, Department of Electrical Engineering.
تاریخ دریافت: 15 اردیبهشت 1404،  تاریخ بازنگری: 20 خرداد 1404،  تاریخ پذیرش: 03 مرداد 1404 
چکیده
This paper presents the design and evaluation of a high-efficiency harmonic tuned L-band power amplifier (PA) utilizing a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). To meet the demands of modern wireless communication and radar systems operating in the L-band, advanced harmonic tuning techniques were employed, specifically focusing on controlling the impedance terminations at the second (2f₀) and third (3f₀) harmonic frequencies. Through careful load-pull analysis and optimized output matching network design, precise harmonic terminations were achieved alongside optimal fundamental frequency impedance matching. The fabricated PA demonstrates state-of-the-art performance, delivering a saturated output power (Psat) of 46.4 dBm with a corresponding peak Power Added Efficiency (PAE) of 83%. Critically, the PA maintains high efficiency under back-off conditions, achieving 60% PAE at 3 dB output back-off (OBO). These results highlight the effectiveness of this combined second and third harmonic optimization approach with GaN HEMT technology, which enables both high peak efficiency and excellent back-off efficiency for demanding L-band applications.
کلیدواژه‌ها
Power Amplifier (PA)؛ Gallium Nitride (GaN)؛ L-Band؛ Harmonic Tuning؛ High Efficiency؛ Power Added Efficiency (PAE)؛ Second and Third Harmonics
مراجع
  1. Cripps, S. C. (2006). RF power amplifiers for wireless communications. Artech House, Norwood, United States.
  2. Grebennikov, A. (2005). RF and microwave power amplifier design. McGraw-Hill, New York, United States.
  3. Abbasnezhad, F., Tayarani, M., Abrishamifar, A., & Nayyeri, V. (2021). A Simple and Adjustable Technique for Effective Linearization of Power Amplifiers Using Harmonic Injection. IEEE Access, 9, 37287–37296. doi:10.1109/access.2021.3063286.
  4. Abbasnezhad, F., Tayarani, M., Abrishamifar, A., & Nayyeri, V. (2022). A highly linearized second harmonic injected GaN power amplifier. Microwave and Optical Technology Letters, 64(10), 1732–1739. doi:10.1002/mop.33360.
  5. Raab, F. H., Asbeck, P., Cripps, S., Kenington, P. B., Popović, Z. B., Pothecary, N., Sevic, J. F., & Sokal, N. O. (2002). Power amplifiers and transmitters for RF and microwave. IEEE Transactions on Microwave Theory and Techniques, 50(3), 814– doi:10.1109/22.989965.
  6. Raab, F. H. (1997). Class-F Power Amplifiers with Maximally Flat Waveforms. IEEE Transactions on Microwave Theory and Techniques, 45(11), 2007–2012. doi:10.1109/22.644215.
  7. Grebennikov, , & Sokal, N. O. (2007). Class-F Power Amplifiers. Switchmode RF Power Amplifiers, 95–149. Newnes, London, United Kingdom. doi:10.1016/b978-075067962-6/50034-4.
  8. Cripps, S. C., Tasker, P. J., Clarke, A. L., Lees, J., & Benedikt, J. (2009). On the continuity of high efficiency modes in linear RF power amplifiers. IEEE Microwave and Wireless Components Letters, 19(10), 665– doi:10.1109/LMWC.2009.2029754.
  9. Wright, P., Lees, J., Benedikt, J., Tasker, P. J., & Cripps, S. C. (2009). A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA. IEEE Transactions on Microwave Theory and Techniques, 57(12), 3196– doi:10.1109/tmtt.2009.2033295.
  10. Colantonio, P., Giannini, F., & Limiti, E. (2009). High Efficiency RF and Microwave Solid State Power Amplifiers. John Wiley & Sons, Hoboken, United States. doi:10.1002/9780470746547.
  11. Mishra, U. K., Parikh, P., & Wu, Y. F. (2002). AlGaN/GaN HEMTs - An overview of device operation and applications. Proceedings of the IEEE, 90(6), 1022–1031. doi:10.1109/JPROC.2002.1021567.
  12. Abbasnezhad, F., Tayarani, M., Abrishamifar, A., & Nayyeri, V. (2022). GaN Power Amplifier Linearization Using Second Harmonic Injection into the Input. 2022 52nd European Microwave Conference, EuMC 2022, 353–356. doi:10.23919/EuMC54642.2022.9924430.
  13. Saez, R. G., & Marques, N. M. (2019). LDMOS versus GaN RF power amplifier comparison based on the computing complexity needed to linearize the output. Electronics (Switzerland), 8(11). doi:10.3390/electronics8111260.
  14. Zaid, M., Nazir, M. S., Dangi, R., & Chauhan, Y. S. (2024). Design and experimental validation of class-F−1 GaN power amplifier using a compact harmonic control unit. Microelectronics Journal, 149, 106218. doi:10.1016/j.mejo.2024.106218.
  15. Zhang, L. C., & Shi, L. X. (2022). Design of 70% PAE Class-F 1.2–1.4 GHz 10 W GaN power amplifier MMIC. Microwave and Optical Technology Letters, 64(4), 670–675. doi:10.1002/mop.33174.
  16. Tanaka, S., Mogami, R., Iisaka, N., Honjo, K., & Ishikawa, R. (2024). A 2‐GHz GaN HEMT Power Amplifier Harmonically Tuned Using a Compact One‐Port CRLH Transmission Line. IET Circuits, Devices & Systems, 2024(1). doi:10.1049/2024/2690713.
  17. Kilic, H. H., & Demir, S. (2019). Highly efficient dual-band GaN power amplifier utilising pin diode-based tunable harmonic load matching. IET Microwaves, Antennas and Propagation, 13(1), 63–70. doi:10.1049/iet-map.2018.5318.
  18. Hu, X., Meng, X., Yu, C., & Liu, Y. (2017). Design of highly efficient broadband harmonic-optimised gan power amplifier via modified simplified real frequency technique. Electronics Letters, 53(21), 1414–1416. doi:10.1049/el.2017.2849.
  19. Zaid, M., Pampori, A., Nazir, M. S., & Chauhan, Y. S. (2023). High Efficiency and High Linearity GaN Power Amplifier with Harmonic Tuning and Fundamental Matching Networks. 2023 IEEE Microwaves, Antennas, and Propagation Conference, MAPCON 2023, 1–4,. doi:10.1109/MAPCON58678.2023.10464181.
  20. Liu, C., Sun, Q., Wu, H. D., Zhang, H., & Ghannouchi, F. M. (2024). Efficiency Enhancement of Class-J Power Amplifiers by Injecting Second Harmonic Into the Gate and Drain Node Simultaneously. IEEE Microwave and Wireless Technology Letters, 34(12), 1347–1350. doi:10.1109/LMWT.2024.3467345.
  21. Xuan, X., Cheng, Z., Zhang, Z., & Le, C. (2023). Design of a 0.4-3.9-GHz Wideband High-Efficiency Power Amplifier Based on a Novel Bandwidth Extended Matching Network. IEEE Transactions on Circuits and Systems II: Express Briefs, 70(8), 2809–2813. doi:10.1109/TCSII.2023.3253551.
  22. Xuan, X., Cheng, Z., Hayes, B., Zhang, Z., Le, C., Gong, T., & Gao, S. (2024). Investigation and Design of Ultra-Wideband Resistive-Reactive Series of Continuous Inverse Modes Power Amplifier With Input Second-Harmonic Manipulation. IEEE Transactions on Circuits and Systems I: Regular Papers, 71(12), 5669–5682. doi:10.1109/TCSI.2024.3473024.
  23. Liang, C., Roblin, P., Hahn, Y., Popovic, Z., & Chang, H. C. (2019). Novel Outphasing Power Amplifiers Designed with an Analytic Generalized Doherty-Chireix Continuum Theory. IEEE Transactions on Circuits and Systems I: Regular Papers, 66(8), 2935–2948. doi:10.1109/TCSI.2019.2910471.
  24. Mohadeskasaei, S. A., & Zhou, X. (2016). A 30 watt high efficient high power RF pulse power amplifier. 2016 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), 1–3. doi:10.1109/nemo.2016.7561638.
  25. Wu, , Yuk, K. S., & Branner, G. R. (2019). A compact 100W, 68% Class F GaN Power Amplifier for L-band GPS. 2019 IEEE 20th Wireless and Microwave Technology Conference, WAMICON 2019, 1–4. doi:10.1109/WAMICON.2019.8765474.
  26. Yang, F., Li, J., Yu, H., Yin, K., Zhao, H., Chen, X., Zhang, A., & Jin, Z. (2022). L-band high power solid-state power amplifier for aerospace usage. Electronics Letters, 58(7), 265– doi:10.1049/ell2.12425.
  27. Mahdi, M., Mohamed, E. N., Elelimy Abounemra, A. M., & Darwish, M. (2022). Optimized Harmonic Tuned High Efficiency L-Band Power Amplifier. 13th International Conference on Electrical Engineering, ICEENG 2022, 96–99. doi:10.1109/ICEENG49683.2022.9782002.
  28. Furxhi, S., De Marzi, S., Cabria, L., Giofre, R., & Colantonio, P. (2023). A 100W High Efficiency Hybrid Broadband GaN Power Amplifier for Galileo Navigation System. 2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023, 88–91. doi:10.23919/EuMIC58042.2023.10289071.
آمار
تعداد مشاهده مقاله: 40
تعداد دریافت فایل اصل مقاله: 18


سامانه مدیریت نشریات علمی. قدرت گرفته از سیناوب