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Performance Evolution of Multi-Valued Nano Inverters | ||
| Contributions of Science and Technology for Engineering | ||
| دوره 3، شماره 3، آبان 2026، صفحه 11-25 اصل مقاله (1.16 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22080/cste.2026.6767 | ||
| نویسندگان | ||
| Sina Nabi1؛ Abdalhossein Rezai* 2 | ||
| 1University of Science and Culture | ||
| 2University of Science and Culture, Bahar st, Shahid Qamushi st, Ashrafi Esfahani Bulvar | ||
| تاریخ دریافت: 05 دی 1404، تاریخ بازنگری: 07 اردیبهشت 1405، تاریخ پذیرش: 04 شهریور 1405 | ||
| چکیده | ||
| In this paper, recent improvements of multi-valued inverters with focus on their superiority over conventional binary logic systems is investigated. The most concentration is on cutting edge transistors in order to utilize logic gates, with a focus on Carbon Nanotube Field Effect Transistors (CNTFET), and Graphene Nanoribbon Field Effect Transistors (GNRFET). The structural and operational principle of these emerging transistors are analyzed according to the comparative evaluation of their performance in terms of variety of parameters such as PDP, delay, power consumption and fabrication complexity. In this paper, the special attention is on CNTFET and GNRFET-based ternary and quaternary inverters. However, in order to have a better approach on performance of multi-valued inverters and the best candidate, pentarnary and binary inverters are investigated. The findings shows that the GNRFET-based inverters have lower propagation delay and less power consumption in comparison with CNTFET counterparts, despite certain trade-offs associated with increased power consumption in specific GNRFET implementations. | ||
| کلیدواژهها | ||
| Nanoelectronics؛ GNRFET؛ CNTFET؛ Inverter؛ MOSFET | ||
| مراجع | ||
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