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BabaeiSedaghat, Sedighe, Mojarad, Morteza, Zadehparizi, Fateme. (1404). A Low-Noise SiGe:C HBT Amplifier with Novel Input Matching Technique for Bluetooth Applications. پژوهشنامه مدیریت اجرایی, (), -. doi: 10.22080/cste.2025.29586.1062
Sedighe BabaeiSedaghat; Morteza Mojarad; Fateme Zadehparizi. "A Low-Noise SiGe:C HBT Amplifier with Novel Input Matching Technique for Bluetooth Applications". پژوهشنامه مدیریت اجرایی, , , 1404, -. doi: 10.22080/cste.2025.29586.1062
BabaeiSedaghat, Sedighe, Mojarad, Morteza, Zadehparizi, Fateme. (1404). 'A Low-Noise SiGe:C HBT Amplifier with Novel Input Matching Technique for Bluetooth Applications', پژوهشنامه مدیریت اجرایی, (), pp. -. doi: 10.22080/cste.2025.29586.1062
BabaeiSedaghat, Sedighe, Mojarad, Morteza, Zadehparizi, Fateme. A Low-Noise SiGe:C HBT Amplifier with Novel Input Matching Technique for Bluetooth Applications. پژوهشنامه مدیریت اجرایی, 1404; (): -. doi: 10.22080/cste.2025.29586.1062

A Low-Noise SiGe:C HBT Amplifier with Novel Input Matching Technique for Bluetooth Applications

Contributions of Science and Technology for Engineering
مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 05 آبان 1404
نوع مقاله: Original Article
شناسه دیجیتال (DOI): 10.22080/cste.2025.29586.1062
نویسندگان
Sedighe BabaeiSedaghat* 1؛ Morteza Mojarad2؛ Fateme Zadehparizi3
1Department of Electrical and Computer Engineering, Faculty member, Urmia University, Urmia
2Department of Electrical and Computer Engineering, Urmia University, Urmia, Iran
3Department of Electrical Engineering, Jahrom University, Jahrom, Iran
تاریخ دریافت: 10 تیر 1404،  تاریخ بازنگری: 29 مهر 1404،  تاریخ پذیرش: 05 آبان 1404 
چکیده
This paper presents a novel SiGe:C HBT low-noise amplifier (LNA) architecture, specifically designed to cover the Bluetooth band (2.402–2.4835 GHz) within a wider operational range of 2.2–2.65 GHz. The proposed design introduces an innovative L–C ladder matching technique that generates left half plane (LHP) zeros, effectively canceling the poles and achieving a flat impedance response across a wide frequency range. This approach not only enhances input matching but also contributes to a lower noise figure (NF) by suppressing transistor thermal noise at the output node. Additionally, a new biasing network for the cascode stage is implemented to simultaneously improve S₁₁ and NF, demonstrating high compatibility with the 0.13 µm SiGe:C BiCMOS process. Simulation results show that the proposed LNA achieves a maximum gain of 23 dB, NF of 2.2 dB, and IIP₃ of +14.45 dBm, while consuming only 40 mW from a 3.3 V supply. The LNA maintains stable performance across a 450 MHz bandwidth (2.2–2.65 GHz), resulting in a Figure of Merit (FOM) of 19.2, which outperforms comparable state of the art designs. Owing to its innovative matching and biasing networks, the proposed structure achieves high linearity, excellent gain, and low noise, making it a promising front end solution for next generation Bluetooth and low power wireless communication systems.
کلیدواژه‌ها
Low Noise Amplifier (LNA)؛ SiGe:C BiCMOS؛ Heterojunction Bipolar Transistor (HBT)؛ Input Matching؛ IHP SiGe:C HBT؛ Bluetooth
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